Ga/sub 0.51/In/sub 0.49/P channel MESFET

High bandgap materials are extremely important for high temperature and high power electronic applications. GaInP is an attractive large bandgap material because it can be grown lattice matched to GaAs. The authors report the first GaInP channel MESFET. The material was grown by a non-hydride MOCVD technique using TBP as the phosphorus source. A 1 μm gate length device had a drain current density of 300 mA/mm, an extrinsic transconductance of 70 mS/mm, a gate-drain breakdown voltage of 17 V, with an f T and f max of 10 and 25 GHz, respectively