Silicon-containing antireflection film comprising a non-polymeric silsesquioxane

Silicon-containing base polymer comprises a non-polymeric silsesquioxane materials and silicon-containing antireflective material containing a photoacid generator. Silicon-containing base polymer may comprise SiO Examples of non-polymeric silsesquioxane materials include cage oligo silsesquioxane having an acid labile side chain attached to the hydrophilic group. Examples of acid labile side chains, tertiary alkyl carbonate, a tertiary alkyl ester, a tertiary alkyl ether, there are acetals and ketals. Examples of hydrophilic groups include phenol, alcohol, carboxylic acid, amides and sulfonamides. Including organic antireflective layer, the silicon-containing antireflection layer provided on the organic anti-reflective layer, and a lithography structure comprising a photoresist layer provided on the silicon-containing antireflective layer. It includes a method of forming a lithographic structure using the above silicon-containing antireflective layer. .FIELD 2B