Low Transparency Current Density and Low Internal Loss of 1060-nm InGaAs Laser With GaAsP–GaAs Superlattices as Strain-Compensated Layer

In this letter, the strained In 0.22 Ga 0.78 As-GaAs single quantum-well lasers grown by metal-organic vapor phase epitaxy were studied. The lasing wavelength of the fabricated InGaAs laser was 1056 nm, whereas the internal loss (alpha i ) and the transparency current density (J tr ) were 1.78 cm -1 and 40.2 A/cm 2 , respectively. By using the GaAsP-GaAs superlattices as strain-compensated layer, the lasing wavelength was 1052 nm, and the alpha i and J tr could be reduced to 0.63 cm -1 and 39.1 A/cm 2 , respectively. To the best of our knowledge, the J tr was the lowest among the reported InGaAs lasers around 1060 nm.