Alkoxy-derived Y2O3-stabilized ZrO2 thin films

Abstract Polycrystalline cubic yttria-stabilized zirconia films ZrO 2 (Y 2 O 3 ) with the thickness of 0.2–0.5 micrometer on silicon and sapphire substrates have been prepared by the sol-gel process. The most stable sols for film application have been obtained by anodic dissolution of yttrium in methoxyethanol solutions of zirconium butoxide in methoxyethanol. The properties of ZrO 2 (Y 2 O 3 ) are significantly governed by annealing conditions. The best properties are demonstrated by the films annealed at 600–700 °C. High annealing temperature (higher than 900 °C) leads to degradation of the film properties owing to mechanical stress and silicon oxidation. Some dielectric properties, and most of all, the silicon-dielectric interface quality of the sol-gel films are superior to the sputtered films. The sol-gel films have been successfully used as barrier layers for preparation of high temperature superconducting Bi 2 Sr 2 CaCu 2 O Y films on sapphire substrates, however, they could not be used as barriers in the case of silicon substrates.