Operating principle and integration of in-plane gate logic devices

Logic devices based on in-plane gate (IPG) transistors are realized and their electrical characteristics and integration are investigated. We present logic devices based on lateral gate structures using an additional IPG transistor as a load resistance. These logic devices show clear input-output characteristics and voltage transfer curves as a logic device and the Hi/Low ratio is high enough for reliable logic operations. Furthermore, the IPG logic devices operate at low current levels. Monolithic NOT-gate is demonstrated and the number of terminals and wiring are considerably reduced by using our IPG logic devices compared to logic devices based on CMOS transistors.