Characterization of SOI MOSFETs by means of charge-pumping

This paper presents the results of charge-pumping measurements of SOI MOSFETs. The aim of these measurements is to provide information on the density of interface traps at the front and back Si-SiO2 interface. Three-level charge-pumping is used to obtain energy distribution of interface traps at front-interface. Keywords—charge-pumping, electrical characterization, interface traps, SOI MOSFET.