Highly reliable planar GaInAs/InP photodiodes with high yield made by atmospheric pressure MOVPE

M.J. Robertson,S. Ritchie,S.K. Sargood,A.W. Nelson,L. Davis,R.H. Walling,C. P. Skrimshire,R.R. Sutherland

Highly reliable planar GaInAs/InP photodiodes with high yield made by atmospheric pressure MOVPE

1988

M.J. Robertson
S. Ritchie
S.K. Sargood
A.W. Nelson
L. Davis
R.H. Walling
C. P. Skrimshire
R.R. Sutherland

A process for making GaInAs/InP PIN photodiodes based on atmospheric pressure MOVPE is described. The technique gives devices with very low dark currents ( >

Keywords:

Chemical vapor deposition
Metalorganic vapour phase epitaxy
Photodiode
Dark current
Electronic engineering
Epitaxy
Atmospheric pressure
Mathematics
Fabrication
Optoelectronics
Planar

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