Power GaAs FET RF Life Test using Temperature-Compensated Electrical Stressing
1986
GaAs FETs were aged in RF operation, while keeping the electrical stress on the WETs like that in a typical application. Lifetimes measured were significantly lower than those predicted by life tests using dc bias only. Significant dependence of lifetimes upon the wafer process lot was found. Voltage screening did not provide more reliable devices.
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