Formation of β-SiC nanocrystals on Si(1 1 1) monocrystal during the HFCVD of diamond

Abstract In this study thin Si(1 1 1) sample was prepared for top view observations by high resolution transmission electron microscopy (HRTEM). The very first steps of diamond nucleation on Si(1 1 1) by a HFCVD process are studied. We detect the polycrystalline growth of silicon carbide grains with a general pseudoepitaxic orientation SiC{2 2 0}//Si{2 2 0}. They are relied by disoriented SiC grains.