Electrothermal analysis of power multifinger HEMTs supported by advanced 3-D device simulation

In this paper we present results of the electrothermal analysis of multifinger power high-electron mobility transistors (HEMTs). The analysis is supported by effective 3-D electrothermal device simulation method developed for Synopsys TCAD Sentaurus environment using mixed-mode setup. The effects of multifinger HEMT structure metallization layout design are studied and described. Simulation results depict significant effect of metallization geometry on electrothermal properties and behavior of the power multifinger HEMTs. Very good comparison between simulation results and experimental data demonstrate validity of the proposed simulation methodology and HEMT structures analysis.