MBE-grown laser diodes based on beryllium containing II–VI semiconductors

Abstract We focus on several aspects of our recent optimization of Beryllium-containing ZnSe-based laser diodes. By passivating the GaAs surface with a BeTe buffer, defect densities below 10 4  cm −2 can be achieved. Structures with BeZnSe–ZnSe-strained layer superlattices in the waveguide regions show T 0 values of 366 K at room temperature and, consequently, laser operation up to 140°C due to an efficient electrical confinement by the superlattice waveguide. In order to circumvent the limitation concerning the band gap (