Graphene oxide-based resistive random memory and preparation method thereof

The invention provides a graphene oxide-based resistive random memory and a preparation method thereof. The resistive random memory comprises a grid, a gate insulator layer, a source, a drain, an active region, a graphene layer and a storage unit, wherein the graphene layer is located between the active region and the source and the drain; the storage unit comprises an upper electrode, a lower electrode and a resistive layer between the upper electrode and the lower electrode, wherein the resistive layer is graphene oxide, and the graphene layer is formed by reducing a graphene oxide layer. By using the graphene layer, the electric stability and reliability of devices are improved; meanwhile, by adopting the method, the process difficulty is reduced, and the production efficiency is improved.