GaInP/AlInP tunnel junction for GaInP/GaAs tandem solar cells

A GaInP/AlInP tunnel diode has been grown by a gas-source molecular beam epitaxy method. A high conductance of 15 mA/cm/sup 2/ at 2.7 mV has been achieved. Using closely optimised growth conditions very high carrier concentrations, both in GaInP and AlInP have been obtained.