Strain distribution and Raman spectroscopy in individual Ge/CdSe biaxial nanowires

The interface property modulated by strain is one of the key factors that determine the performance of heterostructure nanowire devices. In this study, the strain distribution in a Ge/CdSe biaxial nanowire was calculated by a finite element method using boundary conditions. The components of the strain tensor of the biaxial nanowire show different characteristics from those of core–shell nanowires. The relationship between the strain and Raman mode of a Ge sub-nanowire is then revealed. The calculated and measured Raman modes of a Ge sub-nanowire in a Ge/CdSe biaxial nanowire have the same variation in redshift and wide peak as those of unstrained Ge nanowires.