Dynamic semiconductor sensor with a variable capacitor on a laminated substrate

constructed a dynamic semiconductor sensor on a multilayer substrate (1) consisting of a base substrate (2), an insulating layer (3) and a semiconductor layer (4) which, starting from the base substrate (2) are stacked in this order, wherein the dynamic A semiconductor sensor: a first capacitor having a first arm structure (10) formed on the semiconductor layer (4), wherein the first boom structure comprises first boom (12a to 12d) and a first movable electrode (13) (of the first arms relative to the base substrate 2 is stored), wherein an air gap (14) (between the first movable electrode 13) and the base substrate is present, so that the first movable electrode (13) moves in a direction perpendicular to the surface of the semiconductor layer (4), when a dynamic force on the is first movable electrode acting as a first carrier voltage is applied to it and wherein a first capacitance (C1) between the first movable electrode (13) and the base substrate (2) is formed; and a second capacitor ...