The effects of treatment of Si(111) surfaces with NH4F solution on Schottky diode parameters

Abstract A study on Al/p-Si(1 1 1) Schottky barrier diodes (SBDs) parameters with and without a thin chemical oxide layer on p-type Si has been performed. The oxide layer has been formed by a wet chemical oxidation in HNO 3 solution. In order to avoid native oxide formation on the sample surface, the silicon dangling bonds have been passivated with hydrogen atoms by dipping in a NH 4 F solution. It is shown that these treatments give almost the same barrier height values. In addition, it has been found that the treatment of the sample back surface in NH 4 F solution reduces the reverse current and the series resistance.