A method of forming an epitaxial silicon layer.

The present invention relates to a method for forming, by epitaxial growth in vapor phase in the surface of at least one silicon substrate (1), a layer (2) of crystalline silicon having an upper crystallite size of ≤ 100 microns, comprising at least the steps consisting of: (i) providing a silicon substrate (1) having a top grain size or equal to 100 microns and comprising a metal impurity content of 10 ppb to 1 ppm by weight; and (ii) forming said layer (2) of silicon on the surface of said substrate heated to a temperature between 1000 and 1300 ° C, decomposition of at least one silicon precursor by means of an inductively coupled plasma torch ( 4), the surface (11) of said substrate for supporting the layer (2) of silicon being positioned in step (ii) near the exit of the plasma torch.