Impact ionization in crossed electric and magnetic fields in polar semiconductors

Using the model of gyrational quasiscattering the impact-ionization rate in InSb at 77K and 300K and in InAs at 300K is calculated, following previous work by Reuter and Hubner [11]. We include the nonparabolicity of the conduction bands and use Conwell's formula for polar-optical scattering in emission and absorption in a modified version taking into account the nonparabolicity. Below the energy where the energy-exchange from gyrational scattering equals the optical phonon-energy the numerically calculated distribution function is continued by a Maxwellian.