A 10V complementary SiGe BiCMOS foundry process for high-speed and high-voltage analog applications

T. Tominari,Makoto Miura,Hiromi Shimamoto,Mitsuru Arai,Y. Yoshida,H. Sato,T. Aoki,H. Nonami,Shinichiro Wada,H. Hosoe,Katsuyoshi Washio,T. Hashimoto

A 10V complementary SiGe BiCMOS foundry process for high-speed and high-voltage analog applications

2007

T. Tominari
Makoto Miura
Hiromi Shimamoto
Mitsuru Arai
Y. Yoshida
H. Sato
T. Aoki
H. Nonami
Shinichiro Wada
H. Hosoe
Katsuyoshi Washio
T. Hashimoto

A manufacturable 10V-BV cc /15GHz-f r complementary SiGe BiCMOS foundry process was developed for high-performance multi-media applications. A novel SiGe profile with a forward/backward stepped Ge profile and controllable emitter interface layer improved the SiGe PNP's FOM to 620 GHz ldrV.

Keywords:

Electrical engineering
Foundry
Breakdown voltage
Common emitter
High voltage
BiCMOS
Physics
Electronic engineering
Monolithic microwave integrated circuit
Process integration
interface layer

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