Accumulation-mode pi-gate MOSFET

Park,Xiong,Colinge

Accumulation-mode pi-gate MOSFET

2003

Park
Xiong
Colinge

The electrical characteristics of accumulation-mode pi-gate SOI MOSFETs are compared to those of inversion-mode devices. Similar characteristics are observed unless high channel doping concentration is used.

Keywords:

Silicon on insulator
Doping
MOSFET
Electronic engineering
Extrinsic semiconductor
Engineering
Pi
Intrinsic semiconductor
Optoelectronics
Electrical engineering

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