Experimental Comparison Between Sub-0.1- $\mu{\hbox{m}}$ Ultrathin SOI Single- and Double-Gate MOSFETs: Performance and Mobility

This paper presents an experimental comparison between single-gate (SG) and double-gate (DG) transistors performance. Using a novel process flow, we managed to cointegrate these two devices on the same wafer with a TiN metal gate. Short-channel effect control, static performance, and mobility are quantified for each architecture. An in-depth mobility study is performed for a wide range of temperatures (10 K-300 K) and gate lengths (10-20 nm) while channel thickness is fixed at 6 nm. This study experimentally highlights the advantages of DG devices over SG transistors. Good mobility values are obtained for both architectures and we show the advantages of ultrathin body devices over bulk transistors. Finally, we demonstrate that Coulomb scattering is the primary cause of the mobility degradation in short-channel devices