Directed self-oriented self-assembly of block copolymers using chemically modified surfaces

A review of the factors affecting directed self-assembly (DSA) of block copolymers on chemical nanopatterns is presented. The review starts with the formation of chemical patterns suitable for DSA, including patterns and processes that are compatible with industrial fabrication. The critical role of thermodynamics in DSA is then presented, including the impact of chemical pattern geometry and chemistry on the final assembly. The foundation in thermodynamics is also used to explain defect generation and the results observed in DSA with density multiplication. The effect of kinetics in the DSA process is reviewed, focusing on reducing process time to levels that are acceptable for manufacturing process, and the role that kinetics can play in creating trapped defect states. Efforts to achieve sub-10-nm patterning with DSA are shown, including solvent annealing, the use of top-coats, and the synthesis of block copolymers with blocks having similar surface energies. Applications that could benefit from DSA are reviewed, focusing on bit patterned media and fin field-effect transistors. Finally, the integration of DSA on a 300-mm wafer line is presented, including a defect source analysis of DSA on the wafer line.