Exciton localization in (11-22)-oriented semi-polar InGaN multiple quantum wells

Excitonic recombination dynamics in (11-22) -oriented semipolar In 0.2 Ga 0.8 N/In 0.06 Ga 0.94 N multiquantum wells (MQWs) grown on GaN/ m -sapphire templates have been investigated by temperature-dependent time-resolved photoluminescence (TRPL). The radiative and nonradiative recombination contributions to the PL intensity at different temperatures were evaluated by analysing temperature dependences of PL peak intensity and decay times. The obtained data indicate the existence of exciton localization with a localization energy of E loc (15 K ) =7 meV and delocalization temperature of T deloc = 200 K in the semipolar InGaN MQWs. Presence of such exciton localization in semipolar (11-22) -oriented structures could lead to improvement of excitonic emission and internal quantum efficiency.