Resistive AC-Coupled Silicon Detectors principles of operation and first results from a combined laser-beam test analysis.

This paper presents the principles of operation of Resistive AC-Coupled Silicon Detectors (RSD) and the results of the first combined laser-beam test analysis. RSDs are a new type of n-in-p silicon sensor based on the LGAD technology, where the $n^+$ electrode has been designed to be resistive, and the read-out is obtained via AC-coupling. The truly innovative feature of RSD is the fact that the signal from an impinging particle is visible on multiple pads. In RSD, signal sharing is generated internally and it happens equally in both directions. It is obtained without floating electrodes or the presence of an external magnetic field. Careful tuning of the oxide thickness and the $n^+$ doping profile is at the basis of the successful functioning of this design. Several RSD matrices with different pad-pitch geometries have been extensively tested with a laser set-up in the Laboratory for Innovative Silicon Sensors in Torino, while beam test data have been obtained at the Fermilab Test Beam Facility with a 120 GeV/c proton beam with a smaller selection of devices. The resulting spatial resolution ranges between $2.5\; \mu m$ for 70-100 pad-pitch geometry and $17\; \mu m$ with 200-500 matrices, a factor of 10 better than what is achievable in binary read-out ($bin\; size/ \sqrt{12}$). Beam test data show a timing resolution of $\sim 40\; ps$ for 200-$\mu m$ pitch devices, in line with the best performances of LGAD sensors.