Aluminum corrosion preposition technology for removing residual crystal boundary particles

The invention discloses an aluminum corrosion preposition technology for removing residual crystal boundary particles. Before a conventional aluminum etching process, a dry etching processing technology for film accumulation residues in a front-layer procedure of the crystal boundary portion of the edge of a wafer is added in a dry etching machine, the etching technology is subdivided into three technology steps, different mixed reaction gas is introduced under different technology conditions, selective etching processing is performed on a certain area of the crystal boundary of the wafer, and the film accumulation residues on the crystal boundary portion of the wafer are removed in advance; therefore, the phenomenon that the residual particles exist on the crystal boundary of the wafer because the film accumulation residues in the front-layer procedure can not be completely removed during later conventional aluminum etching is avoided, the problem of cross contamination caused by follow-up wet process cleaning is solved, the whole level of the particles is reduced, so that sweeping frequency of a machine is reduced, manpower cost is reduced, the maintaining risk is reduced, and products can circulate normally.