Old Web
English
Sign In
Acemap
>
Paper
>
High performance AlGaN/Gan HEMTs with 0.1µm gate on silicon substrate
High performance AlGaN/Gan HEMTs with 0.1µm gate on silicon substrate
2009
Haifeng Sun
A. R. Alt
Colombo R. Bolognesi
Keywords:
algan gan
Silicon
Optoelectronics
Substrate (chemistry)
Materials science
Correction
Source
Cite
Save
Machine Reading By IdeaReader
0
References
0
Citations
NaN
KQI
[]