COMPENSATION OF RADIATION EFFECTS BY CHARGE TRANSPORT IN METAL-NITRIDE/ OXIDE/SEMICONDUCTOR STRUCTURES.

We consider the effects of ionizing radiation on complementary metal‐nitride‐oxide‐silicon (CMNOS) structures for oxide thicknesses in the range 20–50 A. The bidirectional radiation‐induced threshold‐voltage shifts in CMNOS structures are interpreted in terms of charge accumulation at the nitride‐oxide interface. The electronic recovery of preirradiation threshold‐voltage levels by carrier transport through the thin oxide is shown experimentally.