A process for producing a semiconductor wafer with a low concentration of interstitial oxygen

A method for producing a substrate wafer (100) comprising: providing a device wafer (110) having a first side (111) and a second side (112); Subjecting the device wafer (110) a first high-temperature process for reducing the oxygen content of the device wafer (110) at least in an area (112a) on the second side (112); Bonding the second side (112) of the device wafer (110) to a first side (121) of a carrier wafer (120) to form a substrate wafer (100); Editing of the first side (101) of the substrate wafer (100) to reduce the thickness of the device wafer (110); Subjecting the substrate wafer (100) a second high-temperature process for reducing the oxygen content of at least the device wafer (110); and at least partially integrating at least one semiconductor component (140) in the device wafer (110) after the second high-temperature process.