Magneto-Transport Properties of p-Type Zn1−xMnxTe:N Grown by MBE

The magneto-transport properties of nitrogen-doped p-Zn1−xMn x Te films grown by MBE were studied, with an emphasis on the dependence on the Mn composition and the hole concentration. The Mn composition x and hole concentration p were varied in the range of x = 0.026–0.068 and p = 8.2 × 1018–2.6 × 1019 cm−3. In the measurement of magnetoresistance (MR), a large negative component was observed at low temperatures. In the dependence on the Mn composition, it was found the magnitude of the negative component of MR became larger and survived up to higher temperatures in the sample with a higher Mn composition. The observed negative MR is attributed to the localization of holes due to the magnetic polaron formation. The origin of the dependence on the Mn composition is discussed.