First Demonstration of Silicon-Like >250 I/O Per mm Per Layer Multilayer RDL on Glass Panel Interposers by Embedded Photo-Trench and Fly Cut Planarization

This paper demonstrates for the first time >250 I/O per mm per layer on glass panels utilizing embedded photo-trench and fly cut planarization processes to meet the demands of next generation high bandwidth 2.5D Interposers. This paper combines the use of novel photo-imageable dielectrics developed by TOK and advances in Disco's Fly-Cut planarization technique to deliver unit processes capable of delivering >250 I/O per mm per layer.