Performance analysis of an integrated pin/MISS OEIC for high-current photosensing applications

In this paper, a new pin/MISS photoreceiver with very high output current has been developed successfully by using the combination of the amorphous silicon germanium alloy pin photodiode and metal insulator semiconductor switch (MISS) device. The developed photoreceiver uses the pin photodiode as the light absorption structure and light wavelength selector and the MISS device as the photocurrent amplifier. Based on the experimental results, the photoreceiver yields a very high output current of 3.2 mA at a voltage bias of 6V under an incident light power P in equals 100 μW and has a rise time of 465 μs at a load resistance R equals 1 KΩ. The peak response wavelength of the diode is at 905 nm, i.e. infrared light. Thus the high output current pin/Miss photoreceiver provides a good candidate for the IR OEIC's applications.