Pulsed excimer laser ablation growth and characterization of Ba(Sn0.1Ti0.9)O3 thin films

Abstract Polycrystalline thin films of Ba(Sn 0.1 Ti 0.9 )O 3 were deposited on Pt coated silicon substrates by pulsed excimer laser ablation technique. The room temperature dielectric constant of the Ba(Sn 0.1 Ti 0.9 )O 3 films was 350 at a frequency of 100 kHz. The films showed a slightly diffused phase transition in the range of 275–340 K. The polarization hysteresis behavior confirmed the ferroelectric nature of the thin films. Remanent polarization ( P r ) and saturation polarization ( P s ) were 1.1 and 3.2 μC/cm 2 , respectively. The asymmetric capacitance–voltage curve for Ba(Sn 0.1 Ti 0.9 )O 3 was attributed to the difference in the nature of the electrodes. Dispersion in both the real ( e ′ r ) and imaginary ( e ″ r ) parts of the dielectric constant at low frequencies with increase in temperature was attributed to space charge contribution in the complex dielectric constant.