Polaron binding energy and effective mass in the GaAs film

The binding energy and effective mass of a polaron in a GaAs film deposited on the Al0.3Ga0.7As substrate are studied theoretically by using the fractional-dimensional space approach. Our calculations show that the polaron binding energy and mass shift decrease monotonously with increasing the film thickness. For the film thicknesses with Lw ≤ 70A and the substrate thicknesses with Lb ≤ 200A, the different values of the substrate thickness influence the polaron binding energy and mass shift in the GaAs film. The polaron binding energy and mass shift increase monotonously with increasing the substrate thickness. For the film thickness with Lw ≥ 70A or the substrate thicknesses with Lb ≤ 200A, the different values of the substrate thickness have no significant influence on the polaron binding energy and mass shift in the GaAs film deposited on the Al0.3Ga0.7As substrate.