NMOS andPMOS MetalGateTransistors withJunctions Activated byLaserAnnealing

measured gatelengths) allow theextraction ofthemaintransistor We demonstrate forthefirst timetheintegration ofmetal gate mainparameters, namely overlap capacitance, Leff, Rs/Dand electrode andnon-melt laser annealed junctions inbothNMOS mobility. We useda similar methodaspresented in[9]. We andPMOS transistors. We report thehighest drive current sofar extract theLefffromCV measurement subtracting theparasitic inlaser annealed devices withgoodShort Channel Effects (SCE) capacitance CovatIVbelowVFB,asshowninFig.5.The control downto40nmgatelength. Overlap length isquantified related junction overlap length isdefined ata doping active byCV andSSRM,values of2nm forbothNMOS andPMOS concentration oflel9cm3, asdeduced fromoverlap capacitance laser-annealed transistors arereported forthefirst time. simulation (here notshown). We showinstead alateral junction