Noise characteristics in low-impedance NiFe/Al2O3/NiFe tunnel junctions

Abstract We have studied the low-frequency voltage noise in micron-scale magnetic tunnel junctions. Random telegraph noise (RTN) dominates over 1/ f noise in the switching region of magnetic hysteresis loops, suggesting that RTN comes mostly from local magnetization fluctuations. The temperature dependence of the 1/ f noise and the size of the magnetic fluctuators responsible for the RTN are discussed.