Old Web
English
Sign In
Acemap
>
Paper
>
Degradation and its Fast Recovery in a-IGZO Thin-Film Transistors under Negative Gate Bias Stress
Degradation and its Fast Recovery in a-IGZO Thin-Film Transistors under Negative Gate Bias Stress
2021
Jianing Guo
Dongli Zhang
Mingxiang Wang
Huaisheng Wang
Keywords:
Optoelectronics
fast recovery
Thin-film transistor
bias stress
Degradation (geology)
Materials science
Correction
Source
Cite
Save
Machine Reading By IdeaReader
0
References
0
Citations
NaN
KQI
[]