Thin-film transistor and manufacturing method thereof

The invention relates to a thin-film transistor and a manufacturing method thereof. The thin-film transistor comprises a grid electrode, a grid electrode insulating layer, a metallic oxide layer, an etching barrier layer, and a source electrode and a drain electrode. To be specific, the grid electrode is configured at a substrate. The grid electrode insulating layer is configured at the substrate to cover the grid electrode. The metallic oxide layer is configured at the grid electrode insulating layer and includes a source electrode region, a drain electrode region, and a channel region, wherein the oxygen concentration of the channel region is higher than those of the source electrode region and the drain electrode region. The etching barrier layer is configured above the metallic oxide layer and includes two contact holes, thereby exposing the source electrode region and the drain electrode region respectively. The source electrode and the drain electrode are respectively located at the two sides of the metallic oxide layer and are respectively and electrically connected with the source electrode region and the drain electrode region through the two contact holes.