Optical Transmission Measurements on MOCVD Grown GaMnN Films on Sapphire

We demonstrate optical transmission measurements performed on 1.2 μm thick GaMnN films grown by metalorganic chemical vapor deposition on (0001) sapphire substrates. According to the data acquired from these measurements, Mn forms a deep acceptor band at 1.4 eV above the valance band of GaMnN. Full width at half maximum of this absorption band increases from 107 meV to 198meV as the Mn concentration increases from 0.3% to 1.6 %; which indicates that this band becomes wider as the concentration of Mn increases in the lattice. A broad absorption band starting at 1.9eV and extending to the band edge of GaMnN was also determined. This was attributed to the transition from the Mn energy band to the conduction band edge of GaMnN. Absorption at both of these bands scales with the Mn concentration and thickness of the films. The effect of co-doping of GaMnN films with magnesium on the transmission spectra was also investigated. The absorption band initially observed at 1.4 eV was shifted to 1.6 eV as a result of introduction of Magnesium into the lattice of GaMnN. From these results we conclude that Mn is incorporated in the lattice and forms an energy band in the bandgap of GaMnN. The width of this energy band is also a function of the Mn concentration in GaMnN.