도핑 농도에 따른 나노선 ISFET 센서의 잡음 특성

We compare sensing performances of the inversion mode (IM) and the depletion mode (DM) ion sensitive field effect transistors (ISFETs) in terms of pH sensitivity and signal-to-noise ratio (SNR). The low frequency noise characteristic is measured to calculate SNR. The IM ISFETs show higher sensitivity and SNR, which are highly desirable properties in practical use, than the DM ISFETs.