Comment on “Giant magnetocurrent exceeding 3400% in magnetic tunnel transistors with spin-valve base layers” [Appl. Phys. Lett. 83, 951 (2003)]

In a recent letter, it was reported that a magnetic tunnel transistor (MTT) with a spin-valve base can exhibit high magnetocurrent (MC) as well as output collector current in the microampere regime. While the presented experimental results are sound and unambiguous, the comparison with the spin-valve transistor (SVT) is not. In this comment, we wish to address this by separately comparing the output current, transfer ratio, and MC of both devices.