Negative transconductance in a resistive gate metal-semiconductor field-effect transistor

Negative transconductance is reported in a resistive gate metal‐semiconductor field‐effect transistor (MESFET) for the first time. The negative transconductance arises as a result of the negative differential mobility of electrons in the GaAs channel, and is adequately described by a simple equivalent circuit model. The experimental device is fabricated with a planar ion‐implanted MESFET process, and shows promise as a microwave signal source for use in monolithic microwave integrated circuits.