An asymmetric gate mos device and method of preparation

The present invention discloses an asymmetric gate MOS devices, a gate of the metal gate, and said metal gate work function different from the source and the drain terminal of the MOS device, so that the overall performance of the MOS device further optimization parameter; Meanwhile, also discloses a method for preparing asymmetric MOS device gate, which gate of the MOS devices by ion implantation, the work function of the gate of the MOS device in the source and drain terminal different, so that the overall performance of the MOS device more optimized parameters, the method is simple.