Electronic properties and far infrared spectroscopy of InAs/AlSb quantum wells

Abstract The electronic and magneto-optical properties of the interesting system InAs/AlSb are investigated at low temperatures and in high magnetic fields. The system yields very deep quantum wells with type II staggered bandstructure and can have very high electron concentrations with high mobilities. Far-infrared spectroscopy reveals very pronounced oscillations in the linewidth of the cyclotron resonance absorption line. In the regions of the reststrahlenbands of the system we observe strong interaction of the cyclotron resonance with optical phonons. The number of electrons in this system can be tuned via persistent photoeffect which unexpectedly can lead to both an increase as well as a decrease of the carrier density depending on the wavelength of the illuminating light.