Surface and Thin-Film Analysis, 2. Electron Detection

The article contains sections titled: 1. X-Ray Photoelectron Spectroscopy (XPS) 1.1. Principles 1.2. Instrumentation 1.2.1. Vacuum Requirements 1.2.2. X-Ray Sources 1.2.3. Synchrotron Radiation 1.2.4. Electron Energy Analyzers 1.2.5. Spatial Resolution 1.3. Spectral Information and Chemical Shifts 1.4. Quantification, Depth Profiling, and Imaging 1.4.1. Quantification 1.4.2. Depth Profiling 1.4.3. Imaging 1.5. The Auger Parameter 1.6. Applications 1.6.1. Catalysis 1.6.2. Polymers 1.6.3. Corrosion and Passivation 1.6.4. Adhesion 1.6.5. Superconductors 1.6.6. Interfaces 2. Ultraviolet Photoelectron Spectroscopy (UPS) 3. Auger Electron Spectroscopy (AES) 3.1. Principles 3.2. Instrumentation 3.2.1. Vacuum Requirements 3.2.2. Electron Sources 3.2.3. Electron Energy Analyzers 3.3. Spectral Information 3.4. Quantification and Depth Profiling 3.4.1. Quantification 3.4.2. Depth Profiling 3.5. Applications 3.5.1. Grain Boundary Segregation 3.5.2. Semiconductor Technology 3.5.3. Thin Films and Interfaces 3.5.4. Surface Segregation 4. Scanning Auger Microscopy (SAM) 5. Other Electron-Detecting Techniques 5.1. Auger Electron Appearance Potential Spectroscopy (AEAPS) 5.2. Electron Energy Loss Methods 5.2.1. Electron Energy Loss Spectroscopy (EELS) and Core-Electron Energy Loss Spectroscopy (CEELS) 5.2.2. High-Resolution Electron Energy Loss Spectroscopy (HREELS) 5.3. Diffraction Methods 5.3.1. Low-Energy Electron Diffraction (LEED) 5.3.2. Reflection High-Energy Electron Diffraction (RHEED) 5.4. Ion-Excitation Method 5.4.1. Ion (Excited) Auger Electron Spectroscopy (IAES) 5.4.2. Ion-Neutralization Spectroscopy (INS) 5.4.3. Metastable Quenching Spectroscopy (MQS) 5.5. Inelastic Electron Tunneling Spectroscopy (IETS)