C-Nx thin films deposited by pulsed high energy plasma bombardment

Abstract The C-N x film was deposited on the surface of Si(100) substrate by the pulsed high energy plasma technique at room temperature. Raman spectrum and infrared absorption spectrum indicate that nitrogen is chemically bonded to carbon in the C-N x film. Bombardment of the substrate surface by the high energy plasma has been investigated as a potential process for growing C-N x thin films at relatively low temperature. The films demonstrate good adhesion to the substrate. Microhardness measurements show that the film's hardness is about 3500 kgf/mm 2 .