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Determination of junction depth in implanted silicon by “pulled” anodization and capacitance‐voltage measurements
Determination of junction depth in implanted silicon by “pulled” anodization and capacitance‐voltage measurements
1975
A Balázs
L. Hermann
J. Gyulai
Keywords:
Physics
Capacitor
Ion beam
Nuclear magnetic resonance
Ion implantation
Radiation effect
Voltage
Silicon
Capacitance
Electric potential
Anodizing
junction depth
capacitance voltage
Condensed matter physics
Correction
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