Effect of Tm dopant on luminescence, photoelectric properties and electronic structure of In2S3 quantum dots

Abstract Doping is an effective method to tune the properties of semiconductor nanomaterials. Particularly rare earth ion doping has attracted increasing attention due to its excellent optical properties. However, the design and synthesis of the indium sulfide (In2S3) quantum dots (QDs) with controllable optical electronic structure remain a challenge. Herein, Tm-doped In2S3 QDs are synthesized using a gas-liquid chemical deposition method. Fluorescence intensity of In2S3: Tm QDs has great enhancement, which can be controlled by regulating doping concentrations of Tm3+ ions. The photoelectric properties of In2S3: Tm QDs are also researched and the results demonstrate enhanced sensitivity to light, short response/recovery times and long-term stability. Furthermore, based on first-principles calculations, the change of electronic structure and enhancement of optical properties in In2S3: Tm QDs are mainly attributed to Tm3+ ions doping. The as-synthesized In2S3 QDs with luminescent and photoelectric properties are expected to have extensive applications in photovoltaic, photoelectric and sensor fields.