Electrical properties and limiting position of the fermi level in InSb irradiated with protons

The results of experimental and simulation studies of electrical parameters and the limiting position of the Fermi level in metallurgically and transmutationally doped InSb irradiated with protons (10 MeV, 2×1016 cm−2, 300 K) are reported. It is shown that the limiting electrical parameters of irradiated InSb correspond to a p-type material. Special features of the annealing of radiation defects are studied in the temperature range 20–500°C.