Exposure of AlN and Al2O3 to low energy D and He plasmas

Abstract Aluminum nitride (AlN) and aluminum oxide (Al2O3) were exposed to deuterium (D) and helium (He) plasma in the PISCES-A linear plasma device using RF biasing of the sample manipulator to set the incident ion energy (16–100 eV, 0.7–12 × 1025 m−2,