Growth and anisotropy of La(O, F)FeAs thin films deposited by pulsed laser deposition

LaFeAsO1?xFx thin films were deposited successfully on (001)-oriented LaAlO3 and MgO substrates from stoichiometric LaFeAsO1?xFx polycrystalline targets with fluorine concentrations up to x = 0.25 by pulsed laser deposition (PLD). Room temperature deposition and post annealing of the films yield films with a pronounced c-axis texture and a strong biaxial in-plane orientation. Transport measurements show metallic resistance and the onset of superconductivity at 11?K. ?0Hc 2(T) was determined by resistive measurements and yield ?0Hc 2 values of 3?T at 3.6?K for and 6?T at 6.4?K for .